STN8205D description STN8205D is the dual n-channel enhancemen t mode power field effect transistor which is produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-s ide switching is required. pin configuration tsop-6 s subcontractor y: year a: week code ordering information part number package part marking STN8205Dst6rg tsop-6 sya week code code : a ~ z(1~26) ; a ~ z(27~52) st8205dst6rg st6 : tsop-6; r: tape reel ; g: pb ? free feature z 20v/4.0a, r ds(on) = 30m-ohm@v gs =4.5v z 20v/3.4a, r ds(on) =42m-ohm@v gs =2.5v z super high density cell design for extremely low r ds(on) z exceptional low on-resistance and maximum dc current capability z tsop-6 package design stn8205 sya g1 d g2 s1 d s2 product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drain-source voltage v dss 20 v gate-source voltage v gss +/-20 v 5.0 continuous drain current (t j =150 ) t a =25 t a =70 i d 3.4 a pulsed drain current i dm 20 a continuous source current (diode conduction) i s 2 a 1.15 power dissipation t a =25 t a =70 p d 0.75 w operation junction temperature t j 150 storage temperature range t stg -55/150 thermal resistance-j unction to ambient r ja 100 /w STN8205D product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 20 v gate threshold voltage v gs(th) v ds =vgs,i d =250ua 0.6 1.2 v gate leakage current i gss v ds =0v,v gs =+/-20v 100 na v ds =20v,v gs =0v 1 zero gate voltage drain current i dss v ds =20v,v gs =0v t j =85 5 ua on-state drain current i d(on) v ds Q 5v,v gs =4.5v 5 a v gs =4.5v,i d =4.0a 0.025 0.030 drain-source on-resistance r ds(on) v gs =2.5v,i d =3.4a 0.037 0.042 forward transconductance g fs v ds =5v,i d =3.6a 13 s diode forward voltage v sd i s =1.6a,v gs =0v 0.8 1.2 v dynamic total gate charge q g 10.5 gate-source charge q gs 2.0 gate-drain charge q gd v ds =10v,v gs =4.5v,v ds =2.8a 2.5 nc input capacitance c iss 805 output capacitance c oss 155 reverse transfer capacitance c rss v ds =8v,v gs =0v f=1mhz 122 pf t d(on) 18 turn-on time t r 5 t d(off) 45 turn-off time t f v dd =10v, rl=10 , i d =4.0a, v gen =4.5v, rg=6 22 ns STN8205D product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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